THE APPLICATION OF THE LINEAR HEATING TECHNIQUE TO THE DIFFUSION OF RARE GASES IN SOLIDS.KALBITZER S.1968; EARTH PLANET. SCI. LETTERS; NLD; 1968(1), VOL. 3, NUM. 0004, P. 317 A 320Miscellaneous

Proton stopping data from experiment and theoryKALBITZER, S.Physica status solidi. B. Basic research. 2005, Vol 242, Num 12, pp 2440-2446, issn 0370-1972, 7 p.Article

SPEZIELLE PROBLEME BEI HYPOPHYSENTUMOREN: SIEBEN AUSGEWAEHLTE BEOBACHTUNGEN II = PROBLEMES SPECIAUX DANS LES TUMEURS HYPOPHYSAIRES: SEPT OBSERVATIONS CHOISIES. IIROESSLER R; KALBITZER S.1978; MED. WELT; DEU; DA. 1978; NO 44; PP. 1722-1727Article

Diamond for high-density optical recordingKALBITZER, S.Applied physics. A, Materials science & processing (Print). 2001, Vol 72, Num 6, pp 639-670, issn 0947-8396Article

OHMIC CONTACTS ON N⁺-AND P⁺-SI BY ION IMPLANTATIONFEUERSTEIN A; KALBITZER S.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 19-20; BIBL. 1 REF.Serial Issue

Semiconductors for optical memoriesKALBITZER, S.Current opinion in solid state & materials science. 2002, Vol 6, Num 4, pp 271-279, issn 1359-0286, 9 p.Article

DOPING OF AMORPHOUS SILICON IN THE HOPPING TRANSPORT REGIMEMULLER G; KALBITZER S.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 38; NO 3; PP. 241-254; BIBL. 27 REF.Article

Ionographic patterns with amorphous/crystalline contrastKALBITZER, S.Applied physics. A, Solids and surfaces. 1987, Vol 44, Num 2, pp 153-155, issn 0721-7250Article

ON THE INSULATING PROPERTIES OF THE INTERFACIAL LAYER BETWEEN ION BOMBARDEDAMORPHOUS AND CRYSTALLINE SILICON.MULLER G; KALBITZER S.1977; APPL. PHYS.; GERM.; DA. 1977; VOL. 13; NO 3; PP. 255-259; BIBL. 5 REF.Article

A SCREENED COULOMB POTENTIAL FOR SCATTERING OF SLOW HEAVY IONS.KALBITZER S; OETZMANN H.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 59; NO 3; PP. 197-198; BIBL. 11 REF.Article

Optimised operation of gas field ion sourceKALBITZER, S.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 8, pp 1901-1905, issn 0947-8396, 5 p.Article

Siliziummasken mit amorph-kristallinem Kontrast = Les masques de silicium présentant le contraste état amorphe-cristal = Silicon masks with amorphous state-crystal contrastKALBITZER, S.VDI-Berichte. 1987, Num 666, pp 71-83, issn 0083-5560Conference Paper

EVIDENCE FOR AN INSULATOR-METAL EFFECT ON THE Z₁ RANGE OSCILLATIONS IN THE NUCLEAR STOPPING REGIMEBERTHOLD J; KALBITZER S.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 91; NO 1; PP. 37-39; BIBL. 4 REF.Article

ANGEBORENE UND ERWORBENE HYPOPLASIE DER ERYTHROPOESE = HYPOPLASIE CONGENITALE ET ACQUISE DE L'ERYTHROPOIESEKALBITZER S; ROESSLER R.1980; THERAPIEWOCHE; ISSN 0040-5973; DEU; DA. 1980; VOL. 30; NO 42; PP. 6967-6979; 9 P.; BIBL. 100 REF.Article

SPEZIELLE PROBLEME BEI HYPOPHYSENTUMOREN. SIEBEN AUSGEWAELILTE BEOBACHTUNGEN. I = PROBLEMES SPECIAUX DANS LES TUMEURS HYPOPHYSAIRES. SEPT OBSERVATIONS SELECTIONNEES. IROSSLER R; KALBITZER S.1978; MED. WELT; DEU; DA. 1978; VOL. 29; NO 42; PP. 1649-1652Article

MEASUREMENT OF ULTRA-THIN WINDOWS OF ION IMPLANTED SILICON DETECTORS WITH LOW ENERGY PROTON BEAMS.GRAHMANN H; KALBITZER S.1976; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1976; VOL. 136; NO 1; PP. 145-150; BIBL. 23 REF.Article

CRITICAL CHANNELING ANGLES OF LOW ENERGY IONS IN SILICON.GRAHMANN H; FEUERSTEIN A; KALBITZER S et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 2; PP. 117-119; BIBL. 14 REF.Article

THE EFFECTS OF ION IMPLANTATION ON THE ELECTRICAL PROPERTIES OF AMORPHOUS SILICONKALBITZER S; MUELLER G; LE COMBER PG et al.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 41; NO 4; PP. 439-456; BIBL. 14 REF.Article

CONTROL OF HOPPING CONDUCTIVITY BY STRUCTURAL MODIFICATION OF AMORPHOUS SILICONMUELLER G; KALBITZER S; PFEILSTICKER R et al.1980; Z. PHYS. B; ISSN 0340-224X; DEU; DA. 1980; VOL. 39; NO 1; PP. 21-24; BIBL. 8 REF.Article

DOPING OF AMORPHOUS SILICON BY ALKALI-ION IMPLANTATIONSSPEAR WE; LE COMBER PG; KALBITZER S et al.1979; PHILOS. MAG., B; GBR; DA. 1979; VOL. 39; NO 2; PP. 159-165; BIBL. 9 REF.Article

IMPURITY DIFFUSION IN AMORPHOUS SILICON AND ITS IMPLICATIONS FOR SOLAR CELLSKALBITZER S; REINELT M; STOLZ W et al.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 1059-1062; BIBL. 10 REF.Conference Paper

ON THE VARIATION OF HOPPING TRANSPORT IN AMORPHOUS SILICON WITH PREPARATION CONDITIONSBOEHRINGER K; MUELLER G; KALBITZER S et al.1982; ZEITSCHRIFT FUER PHYSIK B. CONDENSED MATTER; ISSN 0722-3277; DEU; DA. 1982; VOL. 46; NO 4; PP. 301-304; BIBL. 11 REF.Article

OBSERVATION OF VARIABLE RANGE HOPPING AT "NATURAL" PHONON FREQUENCIESPFEILSTICKER R; KALBITZER S; MULLER G et al.1978; Z. PHYS. B; DEU; DA. 1978; VOL. 31; NO 3; PP. 233-235; BIBL. 13 REF.Article

Lattice positions of implanted ions in silicon crystalsFRERICHS, H. P; KALBITZER, S.Radiation effects. 1984, Vol 83, Num 1-2, pp 135-143, issn 0033-7579Article

Atomic transport in and stability of amorphous silicon solar cellsKALBITZER, S; REINELT, M.Solar energy R & D in the European community. Series C. Photovoltaic power generation. 1983, Vol 3, pp 163-169Article